By the end of August 2014, Samsung Electronics announced the production of the world's first using 3D TSV stereo silicon perforation DDR4 memory packaging technology to create a, single capacity up to 64GB. More than a year later, Samsung will be this capacity doubled, the beginning of production TSV DDR4 128GB memory. New memory is still the RDIMM type of the enterprise server market, the use of up to 144 DDR4 chip, each 8Gb (1GB), and then every four chips using TSV technology closely packaged, a total of 36 groups, distributed in the memory of the two sides.
Manufacturing process is the most advanced Samsung 20nm, starting frequency 2400MHz, the next step will be gradually upgraded to 2667MHz, 3200MHz.
In addition, Samsung will also apply to the TSV silicon piercing technology HBM high bandwidth memory.