Home > News content

2017 China will push its own production of 3D NAND flash 32-layer stack

via:纯真网络     time:2016/10/19 17:31:12     readed:2437

As the smart phone, SSD market demand is strong, flash memory, memory and other memory chips are in the recent price increases, which also gave Chinese companies involved in the opportunity of the memory chip market. In the development of semiconductor industry in China planning, the memory chip is the highest priority, but also all over the country are competing to start the project, including state-level storage chip base in Wuhan, investing more than 24 billion US dollars, before the new core technology, Has become a purple-dominated company is expected to officially launched in 2017, the independent production of 3D NAND flash memory, and 32-layer stack, the starting point is not low.

In 2015, the state-level storage chip base to determine settled in Wuhan, Wuhan Xinxin technology company responsible for the construction, in March this year, 12-inch fab officially started, the entire project is expected to invest 24 billion US dollars, divided into three construction, Is the first phase, the main goal is to produce 3D NAND flash memory, 2018 will start the second phase of construction, planning is on the DRAM memory chips, 2019 started the third phase of construction, the main goal is foundry services, production capacity will be more The larger the 2020 target is 300,000 wafers / month, 2030 is 1 million wafers / month.

In July this year, the company acquired the majority of shares of the new core technology companies, the establishment of the Wuhan Yangtze River Storage Technology Co., Ltd. (referred to as TRST), purple holding more than half of the company, chairman Zhao Weiguo will serve as chairman of the Yangtze River Technology Company, The project becomes a purple-dominated - the original acquisition of Micron's dream can not be achieved, the acquisition of Western Digital hard things are yellow, but now can finally enter the purple field of memory chips.

Digitimes citing industry sources, the Yangtze River storage company by the end of 2017 the fastest 3D NAND flash memory, 32-layer stack structure, which means that next year we may see the real domestic flash memory chips.

The new core technology now mainly produces NOR flash memory, while the NAND flash memory is more difficult than the NOR flash memory technology, their technology source is Spansion Semiconductor (Spansion) company. Taking into account the Samsung, Hynix, Toshiba, Micron, Intel and other companies in the technology gap, domestic 3D NAND flash 32-layer stack starting point is not low, these companies research and development for many years, the first generation of 3D flash memory, 32-layer stack is still the mainstream, but until next year, 48-layer or even 64-layer stack of 3D flash I am afraid it has long been available.

2017年中国将推自主生产3D2017年中国将推自主生产3D NAND闪存 32层堆栈

According to previous reports, the new core technology is expected to launch in 4818 stack 48-bit 3D flash memory, then still can not catch up with the top level, but the gap should be reduced a lot, there are chances to catch up with domestic 3D flash.

China IT News APP

Download China IT News APP

Please rate this news

The average score will be displayed after you score.

Post comment

Do not see clearly? Click for a new code.

User comments