They are all based on Toshiba's96-Layer Stacked BiCS4 3D TLC Flash Memory TechnologyThe main control of USF 3.0 is only developed by Toshiba itself.
Specific literacy performance indicators are not disclosed, just sayThe continuous reading and writing speed of 512GB large-capacity model is about 70% and 80% higher than that of the previous UFS 2.1 product, respectively.
According to the technical specifications,The interconnection layer of UFS 3.0 flash memory has two full-dual-pass channels. The maximum data transmission rate of each channel can reach 11.6 Gbps (HS-Gear4). The two-channel is 23.2 Gbps, or 2.9 GB/s.
Support at the same timeQoSIt can better monitor and adjust the transmission channel to maximize performance and efficiency.
It is reported that Toshiba is expected to be the first manufacturer of commercial UFS 3.0 flash memory in smartphones. According to its roadmap, Samsung Galaxy S10 series is basically hopeless to launch UFS 3.0.