The “process node” represents the “average length” of the gate, which will become smaller as the process technology progresses. When the problem is reduced to below 14 nm, the “FinFET” is invented, but 5 When the nanometer is below the problem, the "surrounding gate field effect transistor" appears.
Qu Jianzhong pointed out that the principle of GAA is very simple, that is, increasing the contact area between the gate and the electron channel, which can increase the control effect and reduce the leakage current. apart fromSamsungThe fabs have been developing GAA for a long time, but the structure is slightly different, because the test results are not better than FinFET, and the yield is low, so this proper noun is not used to "deaf people".
Qu Jianzhong stressed that the performance of the "horizontal" GAA and FinFET exhibited by Samsung is not much different. This time, Samsung said that GAA only uses proper nouns to swear by outsiders. It is reported that Samsung wants to use GAA to accumulate electricity in the 3 nanometer corner. "It can only be said that the imagination is not too rich, that is, Samsung's marketing is more powerful."